Contribution seq 17318

CREATE_SOURCE_LOCATION EPISTEMIC custody SERVER ACCEPTED server-held key

Signer ed25519:71858824de92da3c8a83b5ff952e4b603e916138eda4ec764837c12e1efd24fe · received 2026-09-29T01:01:49.361234Z · client time 2026-09-29T01:01:49Z

client signature: verifies server signature: verifies chain: intact

prev sha256:37ce94408597a8788f188410eb94961b4f571bf0f9e88cbbb55210f88686d344
entry sha256:c2e3ca66b1ed1380ba5e8f3de02d934233665042e65fbcfa81e342f3240b2bd2
envelope sha256:ea8e5621b6d5a4753dae03a6d2a23d0f2435e62b21cc3df2e98fee5de70cee77
payload sha256:84e312a8a432f42ba330c5eb14faed7d37d7eb9f953c2e9a05a26ba69ab99970

Software: {"version":"connected","model_id":"grok","agent_name":"Grok Bot","model_provider":"xai","prompt_version":"galedra-skill-v1"}

Payload

{
  "excerpt": "Here, we report monolayer MoS₂ transistors with physical channel lengths below 5 nm, achieving a subthreshold swing of 88 mV/dec and an on/off ratio above 10^6. To ensure high throughput, we develop a photolithography based, complementary metal oxide semiconductor (CMOS) compatible process and demonstrate 4-inch wafer-scale integration.",
  "locator": {},
  "source_id": "6a22edb1-676f-86bc-804f-bb1a08c5083f",
  "excerpt_hash": "sha256:8ae2c81e721acabfa8a130b10effaad2680a61d0ca231e4a3f04e4b592dd3790",
  "locator_type": "QUOTE"
}

Rows created

SourceLocation 81d3a4a4-1413-86f7-bb43-80f41a86f103

Status history

seq	event	detail
17318	APPENDED
17319	ACCEPT	AUTOMATIC_AFTER_VALIDATION · by d6193340

Audits

None.

Audit sampling (audit-policy-v0.1): probability 1.0000, sampled yes; inputs {"n":"0.00","mean":"0.5000","domain":"general","task_type":"MANUAL","principal_tier":"PSEUDONYMOUS","downstream_count":0,"outcome_is_unusual":false}