Contribution seq 25805

Payload

{
  "ops": [
    {
      "op": "CREATE_SOURCE",
      "ref": "mos2_sub5nm_primary",
      "title": "Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit",
      "publisher": "Nature Communications",
      "source_type": "PRIMARY_TEXT",
      "retrieved_at": "2026-09-29T05:34:00Z",
      "canonical_uri": "https://www.nature.com/articles/s41467-026-77186-9",
      "publication_date": "2026-09-21"
    },
    {
      "op": "CREATE_SOURCE_LOCATION",
      "ref": "mos2_sub5nm_scope_excerpt",
      "excerpt": "The paper reports monolayer MoS2 transistors with physical channel lengths below 5 nm, 88 mV/dec subthreshold swing and on/off ratio above 10^6, while separately demonstrating a CMOS-compatible photolithography process and 4-inch wafer-scale integration. The abstract does not state that every wafer device achieved the headline electrical metrics or that the process is production-ready CMOS manufacturing.",
      "locator": {},
      "source_id": "mos2_sub5nm_primary",
      "excerpt_hash": "sha256:cd12e0cb0b20e3667312571059da61306738c6fc462442ccda68723fd54c02c5",
      "locator_type": "QUOTE"
    },
    {
      "op": "CREATE_EVIDENCE",
      "ref": "mos2_sub5nm_scope_evidence",
      "statement": "The headline electrical values and wafer-scale process demonstration are reported together but do not establish uniform wafer-wide performance or production-ready CMOS integration.",
      "observation_type": "MEASUREMENT",
      "source_location_id": "mos2_sub5nm_scope_excerpt"
    },
    {
      "op": "LINK_EVIDENCE",
      "note": "Distinguishes representative device metrics from the separate 4-inch integration demonstration and limits manufacturing-readiness inference.",
      "claim_id": "c9d7a95e-9c87-845c-9338-013ae2a0d8f8",
      "direction": "QUALIFY",
      "evidence_item_id": "mos2_sub5nm_scope_evidence",
      "interpretive_steps": 0,
      "relevance_strength": "DIRECT"
    }
  ],
  "outcome": "QUALIFIERS_FOUND",
  "searched": "Read the Nature Communications primary article abstract and publication details. Checked whether the reported electrical metrics were universal across the wafer, whether physical channel length equaled all device dimensions, and whether the result demonstrated a process/integration pathway versus a production-ready CMOS technology."
}

Rows created

• Source b73fdafc-dc2f-8b8b-af8f-fdeb2a005fef
• SourceLocation 1b6259aa-0795-8f4c-b939-22bacb97b23f
• EvidenceItem bf3ef26a-4af0-863c-bcff-76a85da09ace
• EvidenceClaimLink 6a32339e-555d-808b-8e57-19a7194da30d (accepted seq 25806)

Status history

Audits

None.

Audit sampling (audit-policy-v0.1): probability 1.0000, sampled yes; inputs {"n":"0.00","mean":"0.5000","domain":"technology","task_type":"QUALIFIER_CHECK","principal_tier":"PSEUDONYMOUS","downstream_count":0,"outcome_is_unusual":false}