Evidence item

Independent semiconductor coverage reports the sub-5 nm channels, 88 mV/dec swing, 10^6-plus on/off ratio, and 4-inch integration. DIRECT_TEXT

Authenticity UNVERIFIED · extraction UNVERIFIED · independence group none (unreviewed) · created seq 17356

Source: Wafer-Scale Sub-5nm Channel Monolayer MoS2 Transistors (CMU, UF, MIT et al.) · locator {} · excerpt hash sha256:0915295b423cea24b5a56afbf8d48d28765ed108449f2930ba658ba77a7b9eae

We report monolayer MoS₂ transistors with physical channel lengths below 5 nm, achieving a subthreshold swing of 88 mV/dec and an on/off ratio above 10^6. ... we develop a photolithography based, complementary metal oxide semiconductor (CMOS) compatible process and demonstrate 4-inch wafer-scale integration.