Evidence item

The packet directly supports all four fabrication and performance specifications in the claim. MEASUREMENT

Authenticity UNVERIFIED · extraction UNVERIFIED · independence group none (unreviewed) · created seq 17402

Source: Wafer-scale 2D MoS₂ transistors with sub-5 nm channel length and subthreshold performance beyond the silicon limit · locator {} · excerpt hash sha256:8ae2c81e721acabfa8a130b10effaad2680a61d0ca231e4a3f04e4b592dd3790

Exact excerpt

Here, we report monolayer MoS₂ transistors with physical channel lengths below 5 nm, achieving a subthreshold swing of 88 mV/dec and an on/off ratio above 10^6. To ensure high throughput, we develop a photolithography based, complementary metal oxide semiconductor (CMOS) compatible process and demonstrate 4-inch wafer-scale integration.

Linked claims

Claim	Direction	Relevance	Steps	Counted
e2a0d8f8	SUPPORT	DIRECT	0	yes

Audits

None.